MMRF1314HR5 is an RF power transistor manufactured by NXP, specifically designed for high-power RF applications. Here are the detailed specifications of this product:

Basic Parameters

• Product Type: RF MOSFET Transistors (Radio Frequency Metal-Oxide-Semiconductor Field-Effect Transistors)
• Manufacturer: NXP
• Polarity: N-Channel
• Package: SOT1787
• Technology: LDMOS (Laterally Diffused Metal Oxide Semiconductor)

Electrical Parameters

• Operating Frequency: 1200 to 1400 MHz
• Output Power: 1000 W (Peak)
• Typical Gain (dB): 15.5 dB @ 1200 MHz (Specific gain may vary with frequency)
• Drain-Source Breakdown Voltage (Vds): Not specified directly, but LDMOS transistors generally have high breakdown voltages
• Continuous Drain Current (Id): Not specified directly, but determined by the application and design requirements
• Gate-Source Voltage (Vgs): -6 V to +10 V (Range for controlling gate voltage)
• Power Dissipation (Pd): Not specified directly, but requires good heat dissipation design for high-power applications

Operating Temperature

• Maximum Operating Temperature: +150°C
• Minimum Operating Temperature: -40°C

Application Characteristics

• Broadband Operation: Internal input and output matching for convenient broadband operation and usage
• Configuration Flexibility: Can be used in single-ended, push-pull, or quadrature configurations
• High Robustness: Suitable for pulsed applications, particularly excelling in high-power military and commercial L-band radar applications

Additional Information

• Package/Case: SMD/SMT (Surface-Mount Device/Surface-Mount Technology) packaging, suitable for surface-mount technology
• Packing Quantity: Typically packaged in certain quantities (e.g., 50 pieces) per unit

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